BFU768F_15 Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU768F
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7. Characteristics
Wi-Fi LNA applications circuits; I_C = 10.8 mA; V_CE = 2.1 V; T_amb = 25 C; unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
V_(BR)CBO collector-base breakdown voltage
V_(BR)CEO collector-emitter breakdown voltage
I_C
collector current
I_CBO
collector-base cut-off current
h_FE
DC current gain
s₂₁²
insertion power gain
I_C = 2.5 A; I_E = 0 mA
I_C = 1 mA; I_B = 0 mA
I_E = 0 mA; V_CB = 4.5 V
I_C = 10 mA; V_CE = 2 V
f = 2.4 GHz
f = 5.0 GHz
10 - - V
2.8 - - V
- - 70 mA
- - 100 nA
155 330 505
- 13.1 - dB
- 12.2 - dB
f = 5.9 GHz
- 11.1 - dB
NF_min minimum noise figure
f = 2.4 GHz, measured on the pins
f = 5.8 GHz, measured on the pins
- 0.50 - dB
- 0.74 - dB
NF
noise figure
f = 2.4 GHz
- 1.1 - dB
f = 5.0 GHz
- 1.1 - dB
f = 5.9 GHz
- 1.2 - dB
RL_in
input return loss
f = 2.4 GHz
f = 5.0 GHz
- 10.2 - dB
- 10.5 - dB
f = 5.9 GHz
- 11.3 - dB
RL_out output return loss
f = 2.4 GHz
f = 5.0 GHz
- 11.7 - dB
- 13.7 - dB
f = 5.9 GHz
- 19.3 - dB
P_L(1dB)
output power at 1 dB gain compression f = 2.4 GHz
f = 5.0 GHz
- 3.9 -
- 5.9 -
dBm
dBm
f = 5.9 GHz
- 4.9 - dBm
IP3
third-order intercept point
f = 2.4 GHz
- 15.7 - dBm
f = 5.0 GHz
- 18.8 - dBm
f = 5.9 GHz
- 18.8 - dBm
t_on
turn-on time
2.4 GHz Wi-Fi LNA application
4.9 GHz to 5.9 GHz Wi-Fi LNA application
- 170 - ns
- 300 - ns
t_off
turn-off time
2.4 GHz Wi-Fi LNA application
4.9 GHz to 5.9 GHz Wi-Fi LNA application
- 40 - ns
- 12 - ns
BFU768F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.2 — 24 December 2012
© NXP B.V. 2012. All rights reserved.
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