BFU768F_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU768F
NPN wideband silicon germanium RF transistor
60
I_C
(mA)
40
20
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(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
0
0
1
2
3
V_CE (V)
T_amb = 25 C.
(1) I_B = 180 A
(2) I_B = 160 A
(3) I_B = 140 A
(4) I_B = 120 A
(5) I_B = 100 A
(6) I_B = 80 A
(7) I_B = 60 A
(8) I_B = 40 A
(9) I_B = 20 A
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
500
h_FE
400
001aam864
300
200
100
0
0
20
V_CE = 2 V; T_amb = 25 C.
40
60
I_C (mA)
Fig 3. DC current gain as a function of collector
current; typical values
BFU768F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.2 — 24 December 2012
© NXP B.V. 2012. All rights reserved.
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