BFU768F_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

BFU768F
NPN wideband silicon germanium RF transistor
Rev. 1.2 — 24 December 2012
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
 Low noise high linearity RF transistor
 110 GHz f_T silicon germanium technology
 Optimal linearity for low current and high gain
 Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz
 Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM band
and 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:
 Low current: 10.8 mA
 Noise figure < 1.2 dB
 Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz
 High IP3: 15.7 dBm at 2.4 GHz, 18.8 dBm at 5 GHz
 Very fast on/off times
 Unconditionally stable
 Higher IP3, higher gain or lower noise figure possible with different application circuits
1.3 Applications
 High linearity applications
 Medium output power applications
 Wi-Fi / WLAN / WiMAX
 ZigBee