BUK573-48C Datasheet, PDF (6/9 Pages) NXP Semiconductors – PowerMOS transistor Clamped logic level FET

Philips Semiconductors
PowerMOS transistor
Clamped logic level FET
Product specification
BUK573-48C
C / pF
2000
1000
500
BUK5Y3-48C
Ciss
200
Coss
100
Crss
50
0.01
0.1
1
VDS / V
10
100
Fig.15. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
VGS / V
7
6
VDD / V = 12
BUK5Y3-48C
30
5
4
3
2
1
0
0
5
10
15
20
QG / nC
Fig.16. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 10 A.
t _{p : adjust for correct Ic}
V_DD
Load
D.U.T.
R_G
V_GE
Id measure
0V
0R1
Fig.17. Inductive clamping test circuit.
I,V
V_(CL)DSR
5V
I_D
V_DS
V_GS
t
P,E
PDS = ID x VDS
E = PDS dt
W_DSR
t
Fig.18. Typical Inductive Clamping waveforms
August 1994
6
Rev 1.000