BUK573-48C Datasheet, PDF (3/9 Pages) NXP Semiconductors – PowerMOS transistor Clamped logic level FET

Philips Semiconductors
PowerMOS transistor
Clamped logic level FET
Product specification
BUK573-48C
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T_j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_DR
Continuous reverse drain
-
current
I_DRM
Pulsed reverse drain current -
V_SD
Diode forward voltage
I_F = 13 A ; V_GS = 0 V
CLAMPED ENERGY LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
W_DSRS
Drain-source non repetitive
clamped inductive turn off
energy
T_j = 25˚C prior to clamping;
I_D = 10 A; V_GS = 5 V; R_GS = 10 kΩ;
inductive load (see Figs. 17,18)
W_DSRR
Drain-source repetitive clamped T_j = 150˚C prior to clamping;
inductive turn off energy
I_D = 10 A; V_GS = 5 V; R_GS = 10 kΩ;
inductive load (see Figs. 17,18)
MIN. TYP. MAX. UNIT
-
-
13
A
-
-
52
A
- 1.05 1.3 V
MIN.
-
MAX.
200
UNIT
mJ
-
50
mJ
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_hs)
ID%
120
110
100
90
Normalised Current Derating
with heatsink compound
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Ths / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_hs); conditions: V_GS ≥ 5 V
August 1994
3
Rev 1.000