BUK573-48C Datasheet, PDF (4/9 Pages) NXP Semiconductors – PowerMOS transistor Clamped logic level FET

Philips Semiconductors
PowerMOS transistor
Clamped logic level FET
Product specification
BUK573-48C
ID / A
100
RDS(ON) ^{= VDS/ID}
10
1
DC
BUK573-48C
tp =
10 us
100 us
1 ms
10 ms
100 ms
Self-clamped
0.1
1
10
100
VDS / V
Fig.3. Safe operating area. T_hs = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
ID / A
40
10
30
BUK5Y3-48C
VGS / V = 5
4.5
4
20
3.5
10
3
2.5
0
0
2
4
6
8
10
VDS / V
Fig.4. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
BUK5Y3-48C
0.5
2.5 3
3.5
VGS / V = 4
0.4
4.5
0.3
5
0.2
0.1
10
0
0
Fig.5.
10
20
30
40
VDS / V
Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
Zth j-hs / (K/W)
1E+01
ZTHX43
0.5
1E+00 0.2
0.1
0.05
1E-01 ^0.02
P_D
tp
D
=
tp
T
0
1E-02
1E-07
1E-05
1E-03
t/s
T
t
1E-01
1E+01
Fig.6. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
ID / A
40
BUK5Y3-48C
30
20
10
Tmb / degC =
150
25
-55
0
0
1
2
3
4
5
6
7
VGS / V
Fig.7. Typical transfer characteristics.
I_D = f(V_GS) ; conditions: V_DS = 25 V.
gfs / S
20
BUK5Y3-48C
15
10
5
Tmb / degC =
150
25
-55
0
0
10
20
30
40
Id / A
Fig.8. Typical transconductance.
g_fs = f(I_D); conditions: V_DS = 25 V
August 1994
4
Rev 1.000