 English |
|
|
|
|
|
|
|
| BUJD103AD_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – NPN power transistor with integrated diode | |||
| |||
| ◁ |
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
ICES
ICBO
collector-emitter cut-off VBE = 0 V; VCE = 700 V; Tj = 125 °C
[1]
current
VBE = 0 V; VCE = 700 V; Tj = 25 °C
[1]
collector-base cut-off VCB = 700 V; IE = 0 A
[1]
current
ICEO
collector-emitter cut-off VCE = 400 V; IB = 0 A
[1]
current
IEBO
emitter-base cut-off VEB = 7 V; IC = 0 A
current
VCEsat
collector-emitter
saturation voltage
IC = 3 A; IB = 0.6 A; see Figure 7;
see Figure 8
VBEsat
base-emitter saturation IC = 3 A; IB = 0.6 A; see Figure 9
voltage
VF
forward voltage
IF = 2 A; Tj = 25 °C
hFE
DC current gain
IC = 1 mA; VCE = 5 V; Tmb = 25 °C;
see Figure 10
IC = 500 mA; VCE = 5 V; Tj = 25 °C;
see Figure 10
IC = 2 A; VCE = 5 V; Tmb = 25 °C;
see Figure 10
IC = 3 A; VCE = 5 V; Tmb = 25 °C;
see Figure 10
Dynamic characteristics
ton
turn-on time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
RL = 75 â¦; Tj 25 °C; resistive load;
see Figure 11; see Figure 12
ts
storage time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
RL = 75 â¦; Tj = 25 °C; resistive load;
see Figure 11; see Figure 12
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tj = 25 °C; inductive load;
see Figure 13; see Figure 14
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tj = 100 °C; inductive load;
see Figure 13; see Figure 14
tf
fall time
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
RL = 75 â¦; Tj = 25 °C; resistive load;
see Figure 11; see Figure 12
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tj = 100 °C; inductive load;
see Figure 13; see Figure 14
IC = 2 A; IBon = 0.4 A; VBB = -5 V;
LB = 1 µH; Tj 25 °C; inductive load;
see Figure 13; see Figure 14
[1] Measured with half-sine wave voltage (curve tracer)
BUJD103AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 â 3 August 2010
Min Typ Max Unit
-
-
2
mA
-
-
1
mA
-
-
1
mA
-
-
0.1 mA
-
-
10 mA
-
0.29 1
V
-
0.99 1.5 V
-
1.04 1.5 V
10
15
32
13
21
32
11
16
22
-
12.5 -
-
0.52 0.6 µs
-
2.7 3.3 µs
-
1.2 1.4 µs
-
-
1.8 µs
-
0.3 0.35 µs
-
-
0.12 µs
-
0.03 0.06 µs
© NXP B.V. 2010. All rights reserved.
6 of 13
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese