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BUJD103AD_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – NPN power transistor with integrated diode
NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
7.0
7.0
2.15
2.5
1.5
4.57
001aab021
Fig 5. Minimum footprint SOT428
10
001aab998
Zth(j-mb)
(K/W)
1 δ = 0.5
10−1
0.2
0.1
0.05
0.02
0.01
Ptot
δ = tp
T
10−2
10−5
10−4
10−3
10−2
10−1
tp
t
T
1
10
tp (s)
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
BUJD103AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 August 2010
© NXP B.V. 2010. All rights reserved.
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