BUJD103AD_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – NPN power transistor with integrated diode

BUJD103AD
NPN power transistor with integrated diode
Rev. 3 — 3 August 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic
package.
1.2 Features and benefits
„ Fast switching
„ High voltage capability
„ Integrated anti-parallel E-C diode
„ Very low switching and conduction
losses
1.3 Applications
„ DC-to-DC converters
„ Electronic lighting ballasts
„ Inverters
„ Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
I_C
collector current see Figure 1; see Figure 2; DC;
see Figure 4
P_tot
total power
see Figure 3; T_mb ≤ 25 °C
dissipation
V_CESM
collector-emitter V_BE = 0 V
peak voltage
Static characteristics
h_FE
DC current gain I_C = 500 mA; V_CE = 5 V;
see Figure 10; T_j = 25 °C
V_CE = 5 V; I_C = 3 A;
T_mb = 25 °C; see Figure 10
Min Typ Max Unit
-
-
4
A
-
-
80 W
-
-
700 V
13 21 32
-
12.5 -