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| BUJD103AD_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – NPN power transistor with integrated diode | |||
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NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
10
IC
(A)
8
001aac000
6
4
2
0
0
200
400
600
800
1000
VCEclamp (V)
Fig 1. Reverse bias safe operating area
120
Pder
(%)
80
VCC
LC
VCL(CE)
probe point
IBon
LB
VBB
DUT
001aab999
Fig 2. Test circuit for reverse bias safe operating area
001aab993
40
0
0
40
80
120
160
Tmb (°C)
Fig 3. Normalized total power dissipation as a function of mounting base temperature
BUJD103AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 â 3 August 2010
© NXP B.V. 2010. All rights reserved.
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