BUJD103AD_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN power transistor with integrated diode

NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
B
base
C
collector^[1]
E
emitter
Simplified outline
mb
Graphic symbol
C
B
2
1
3
SOT428 (DPAK)
[1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
3. Ordering information
E
sym131
Table 3. Ordering information
Type number
Package
Name
BUJD103AD
DPAK
4. Limiting values
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_CESM
V_CBO
V_CEO
I_C
collector-emitter peak voltage
collector-base voltage
collector-emitter voltage
collector current
V_BE = 0 V
I_E = 0 A
I_B = 0 A
DC; see Figure 1; see Figure 2;
see Figure 4
I_CM
peak collector current
see Figure 1; see Figure 2; see Figure 4
I_B
base current
DC
I_BM
peak base current
P_tot
total power dissipation
T_mb ≤ 25 °C; see Figure 3
T_stg
storage temperature
T_j
junction temperature
Min Max Unit
-
700 V
-
700 V
-
400 V
-
4
A
-
8
A
-
2
A
-
4
A
-
80 W
-65 150 °C
-
150 °C
BUJD103AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 August 2010
© NXP B.V. 2010. All rights reserved.
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