BUJD103AD_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – NPN power transistor with integrated diode

NXP Semiconductors
BUJD103AD
NPN power transistor with integrated diode
10²
I_C
(A)
I_CM(ma¹_x⁰₎
I_C(max)
1
10^−1
001aac001
duty cycle = 0.01
II₍₃₎
t_p = 20 μs
(1)
50 μs
100 μs
200 μs
(2)
500 μs
DC
10^−2
I₍₃₎
10^−3
1
10
10²
Fig 4.
1) P_tot maximum and P_tot peak maximum lines
2) Second breakdown limits
3) I = Region of permissable DC operation
II = Extension for repetitive pulse operation
III = Extension during turn-on in single transistor converters
provided that R_BE ≤ 100 Ω and t_p ≤ 0.6 μs
Forward bias safe operating area for T_mb ≤ 25 °C
III₍₃₎
10³
V_CEclamp (V)
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see Figure 6
printed-circuit-board mounted; minimum
footprint; see Figure 5
Min Typ Max Unit
-
-
1.56 K/W
-
75
-
K/W
BUJD103AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 August 2010
© NXP B.V. 2010. All rights reserved.
4 of 13