BFG67W Datasheet, PDF (6/16 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG67W
BFG67W/X; BFG67W/XR
30
handbook, halfpage
gain
(dB)
20
MSG
G _UM
10
MLB986
G _max
0
0
10
20
30
IC (mA)
f = 1 GHz; V_CE = 8 V.
Fig.7 Gain as a function of collector current;
typical values.
50
hand_gbo_ao_ink, halfpage
(dB)
40
G _UM
30
MSG
20
10
0
10
10²
MLB987
G _max
10³
10⁴
f (MHz)
I_C = 5 mA; V_CE = 8 V.
Fig.8 Gain as a function of frequency;
typical values.
50
hand_gbo_ao_ink, halfpage
(dB)
40
G _UM
MSG
30
20
10
0
10
10²
MLB988
G _max
10³
10⁴
f (MHz)
50
hand_gbo_ao_ink, halfpage
(dB)
40
G _UM
MSG
30
20
10
0
10
10²
MLB989
G _max
10³
10⁴
f (MHz)
I_C = 15 mA; V_CE = 8 V.
Fig.9 Gain as a function of frequency;
typical values.
August 1995
I_C = 30 mA; V_CE = 8 V.
Fig.10 Gain as a function of frequency;
typical values.
6