BFG67W Datasheet, PDF (5/16 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG67W
BFG67W/X; BFG67W/XR
handboo¹k,²h⁰alfpage
h _FE
80
MBB301
40
0
0
20
40 _{I C (mA)} 60
V_CE = 5 V.
Fig.4 DC current gain as a function of collector
current; typical values.
hand_Cbo_ro_ek, h¹alfpage
(pF)
0.8
0.6
0.4
0.2
0
0
4
MLB984
8
12
16
V _CB (V)
I_C = 0; f = 1 MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical values.
10
handbo_fo_Tk, halfpage
(GHz)
8
MLB985
6
4
2
0
0
10
20
30
40
IC (mA)
f = 2 GHz; V_CE = 8 V; T_amb = 25 °C.
Fig.6 Transition frequency as a function of
collector current; typical values.
August 1995
5