BFG67W Datasheet, PDF (3/16 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG67W
BFG67W/X; BFG67W/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_s = 85 °C; see Fig.3; note 1
MIN.
−
−
−
−
−
−65
−
MAX.
20
10
2.5
50
500
+150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point up to T_s = 85 °C; note 1
Note to the “Limiting values” and “Thermal characteristics”
1. T_s is the temperature at the soldering point of the collector pin.
VALUE
180
UNIT
K/W
600
handbook, halfpage
P _tot
(mW)
400
MBG248
200
0
0
50
100
150
Ts
(^o C) ²⁰⁰
Fig.3 Power derating curve.
August 1995
3