BFG67W Datasheet, PDF (12/16 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG67W
BFG67W/X; BFG67W/XR
SPICE parameters for the BFG67W crystal
SEQUENCE No. PARAMETER VALUE UNIT
1
IS
556.4 aA
2
BF
170.0 −
3
NF
0.995 −
4
VAF
48.03 V
5
IKF
918.1 mA
6
ISE
10.47 fA
7
NE
1.479 −
8
BR
142.1 −
9
NR
0.994 −
10
VAR
2.555 V
11
IKR
9.632 A
12
ISC
438.2 aA
13
14
15
16
17
18
19⁽¹⁾
20⁽¹⁾
21⁽¹⁾
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
1.089 −
10.00 Ω
1.000 µA
10.00 Ω
655.9 mΩ
2.000 Ω
0.000 −
1.110 eV
3.000 −
22
CJE
1.137 pF
23
VJE
600.0 mV
24
MJE
0.249 −
25
TF
11.97 ps
26
XTF
25.99 −
27
VTF
1.223 V
28
ITF
197.3 mA
29
PTF
10.03 deg
30
CJC
515.9 fF
31
VJC
155.8 mV
32
33
34
35⁽¹⁾
MJC
XCJC
TR
CJS
56.02 −
130.0 −
1.877 ns
0.000 F
SEQUENCE No.
36⁽¹⁾
37⁽¹⁾
38
PARAMETER
VJS
MJS
FC
VALUE UNIT
750.0 mV
0.000 −
0.870 −
Note
1. These parameters have not been extracted, the
default values are shown.
handbook, halfpage
C _cb
L1
B
C _be
LB
B' C'
E'
LE
L3
L2
C
Cce
MBC964
E
QL_B = 50; QL_E = 50; QL_B,E(f) = QL_B,E√(f/f_c);
f_c = scaling frequency = 1 GHz.
Fig.20 Package equivalent circuit SOT343;
SOT343R.
List of components (see Fig.20)
DESIGNATION
C_be
C_cb
C_ce
L1
L2
L3
L_B
L_E
VALUE
70
50
115
0.34
0.10
0.25
0.40
0.40
UNIT
fF
fF
fF
nH
nH
nH
nH
nH
August 1995
12