BFG67W Datasheet, PDF (4/16 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG67W
BFG67W/X; BFG67W/XR
CHARACTERISTICS
T_j = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
h_FE
f_T
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown
voltage
collector cut-off current
DC current gain
transition frequency
C_c
collector capacitance
C_e
emitter capacitance
C_re
feedback capacitance
G_UM
maximum unilateral power
gain; note 1
F
noise figure
CONDITIONS
open emitter; I_C = 10 µA; I_E = 0
MIN. TYP. MAX. UNIT
−
−
20
V
open base; I_C = 10 mA; I_B = 0
−
−
10
V
open collector; I_E = 10 µA; I_C = 0 −
−
2.5 V
open emitter; V_CB = 5 V; I_E = 0
−
I_C = 15 mA; V_CE = 5 V
60
I_C = 15 mA; V_CE = 8 V; f = 500 MHz; −
T_amb = 25 °C
I_E = i_e = 0; V_CE = 8 V; f = 1 MHz
−
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz −
I_C = 0; V_CE = 8 V; f = 1 MHz
−
I_C = 15 mA; V_CE = 8 V; f = 1 GHz; −
T_amb = 25 °C
I_C = 15 mA; V_CE = 8 V; f = 2 GHz; −
T_amb = 25 °C
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V;
−
f = 1 GHz
Γ_s = Γ_opt; I_C = 15 mA; V_CE = 8 V;
−
f = 1 GHz
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V;
−
f = 2 GHz
−
50
100 −
7.5
−
0.7
−
1.3
−
0.5
−
15.5 −
10
−
1.3
−
1.7
−
2.2
−
nA
GHz
pF
pF
pF
dB
dB
dB
dB
dB
Note
1. G_UM is the maximum unilateral power gain, assuming s₁₂ is zero.
G_UM
=
10
log --₍--1-----_–------s---₁---₁----₂^s---₎-²--¹-₍---1-²----_–------s---₂--₂-----₂---₎-
dB.
August 1995
4