BFG67W Datasheet, PDF (2/16 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG67W
BFG67W/X; BFG67W/XR
FEATURES
• High power gain
• Low noise figure
• Gold metallization ensures
excellent reliability.
MARKING
TYPE NUMBER
BFG67W
BFG67W/X
BFG67W/XR
CODE
V2
V6
V7
APPLICATIONS
They are intended for wideband
applications in the GHz range such as
analog satellite television systems
and portable RF communication
equipment.
DESCRIPTION
NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitter SOT343 and SOT343R
packages.
PINNING
PIN
DESCRIPTION
BFG67W (see Fig.1)
1 collector
2 base
3 emitter
4 emitter
BFG67W/X (see Fig.1)
1 collector
2 emitter
3 base
4 emitter
BFG67W/XR (see Fig.2)
1 collector
2 emitter
3 base
4 emitter
fpage
4
3
1
Top view
2
MBK523
Fig.1 SOT343.
alfpage
3
4
2
Top view
1
MSB842
Fig.2 SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
F
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
open base
− − 20 V
− − 10 V
− − 50 mA
up to T_s = 85 °C
−
I_C = 15 mA; V_CE = 5 V
60
I_C = 0; V_CE = 8 V; f = 1 MHz
−
I_C = 15 mA; V_CE = 8 V; f = 500 MHz; T_amb = 25 °C −
I_C = 15 mA; V_CE = 8 V; f = 1 GHz; T_amb = 25 °C −
− 500
100 −
0.5 −
7.5 −
15.5 −
mW
pF
GHz
dB
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 8 V; f = 2 GHz
− 2.2 − dB
August 1995
2