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| PSMN8R0-30YL_1105 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK | |||
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NXP Semiconductors
PSMN8R0-30YL
N-channel 8.3 m⦠30 V TrenchMOS logic level FET in LFPAK
6. Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 12
ID = 1 mA; VDS = VGS; Tj = 150 °C;
see Figure 12
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 12
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 15 A; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 150 °C;
see Figure 13
RG
gate resistance
Dynamic characteristics
VGS = 10 V; ID = 15 A; Tj = 25 °C
f = 1 MHz
QG(tot)
total gate charge
ID = 45 A; VDS = 15 V; VGS = 4.5 V;
see Figure 14; see Figure 15
ID = 45 A; VDS = 15 V; VGS = 10 V;
see Figure 14; see Figure 15
QGS
QGS(th)
gate-source charge
pre-threshold gate-source
charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 45 A; VDS = 15 V; VGS = 10 V;
see Figure 14; see Figure 15
QGS(th-pl)
post-threshold gate-source
charge
QGD
VGS(pl)
gate-drain charge
gate-source plateau voltage
VDS = 15 V; see Figure 14;
see Figure 15
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 17
VDS = 15 V; RL = 0.5 â¦; VGS = 4.5 V;
RG(ext) = 4.7 â¦
VDS = 15 V; RL = 0.5 â¦; VGS = 4.5 V;
RG(ext) = 4.7 â¦
PSMN8R0-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 16 May 2011
Min Typ Max Unit
30 -
-
V
27 -
-
V
1.3 1.7 2.15 V
0.5 -
-
V
-
-
2.55 V
-
0.02 1
µA
-
-
100 µA
-
10
100 nA
-
10
100 nA
-
10.4 12.2 mâ¦
-
-
15 mâ¦
-
6.9 8.3 mâ¦
-
2.03 -
â¦
-
9
-
nC
-
18.3 -
nC
-
16.1 -
nC
-
2.7 -
nC
-
1.5 -
nC
-
1.2 -
nC
-
4
-
nC
-
3.2 -
V
-
1005 -
pF
-
200 -
pF
-
102 -
pF
-
15
-
ns
-
29 -
ns
-
21
-
ns
-
8
-
ns
© NXP B.V. 2011. All rights reserved.
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