PSMN8R0-30YL_1105 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK

NXP Semiconductors
PSMN8R0-30YL
N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
Conditions
see Figure 4
Min Typ Max Unit
-
1.35 2.7 K/W
10
Z_th(j-mb)
(K/W)
003aaf420
1
δ = 0.5
0.2
0.1
10^-1 _0.05
0.02
P
δ = ^tp
T
single shot
tp
t
T
10^-2
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
t_p (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN8R0-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2011
© NXP B.V. 2011. All rights reserved.
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