PHN603S Datasheet, PDF (5/7 Pages) NXP Semiconductors – TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver

Philips Semiconductors
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
Product specification
PHN603S
Drain current, ID (A)
100mA
Sub-Threshold Conduction
10mA
1mA
min
typ
100uA
10uA
VDS = VGS
Tj = 25 C
1uA
0
1
2
3
4
5
Gate-source voltage, VGS (V)
Fig.13. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C
Capacitances, Ciss, Coss, Crss (pF)
10000
PHN603S
1000
Ciss
Coss
100
0.1
Crss
1
10
100
Drain-Source Voltage, VDS (V)
Fig.14. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
Gate-source voltage, VGS (V)
15
14 ID = 1A
13
12
Tj = 25 C
11 VDD = 20 V
10
9
8
7
6
5
4
3
2
1
0
0
5
10
15
Gate charge, QG (nC)
PHN603S
20
25
Fig.15. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G)
Source-Drain Diode Current, IF (A)
5
4.5 ^{VGS = 0 V}
4
3.5
150 C
3
Tj = 25 C
2.5
2
1.5
1
0.5
0
0
0.1 0.2 0.3 0.4 0.5 0.6
Drain-Source Voltage, VSDS (V)
PHN603S
0.7 0.8
Fig.16. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
October 1998
5
Rev 1.000