PHN603S Datasheet, PDF (1/7 Pages) NXP Semiconductors – TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver

Philips Semiconductors
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
Product specification
PHN603S
FEATURES
SYMBOL
• Schottky diode across each D4
MOSFET
• Low on-state resistance
• Fast switching
G6
G5
• Logic level compatible
• Surface mount package
D1
D2
G1
S1
G2
S2
G4
D3
G3
S3
QUICK REFERENCE DATA
V_DS = 25 V
I_D = 5.5 A
R_DS(ON) ≤ 35 mΩ (V_GS = 10 V)
R_DS(ON) ≤ 55 mΩ (V_GS = 4.5 V)
GENERAL DESCRIPTION PINNING
SOT137-1 (SO24)
Six n-channel, enhancement PIN
DESCRIPTION
Top view
mode, logic level, field-effect
power transistors and six schottky 1,4
drain 1
1
24
diodes configured as three 2
source 1
half-bridges. This device has low 3
gate 1
on-state resistance and fast 5,8
drain 2
switching. The intended 6
source 2
application is in computer disk and 7
gate 2
tape drives as a three phase 9,12
drain 3
brushless d.c. motor driver.
10
source 3
11
gate 3
The PHN603S is supplied in the 13
gate 4
SOT137-1 (SO24) surface 14-16, 18-20, 22-24 drain 4
mounting package.
17
gate 5
21
gate 6
12
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_DS
V_DS
V_DGR
V_GS
I_D
I_DM
P_tot
P_tot
T_stg, T_j
Repetitive peak drain-source
voltage
Continuous drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current per device (DC)
Drain current per device (pulse
peak value)
Total power dissipation per device
Total power dissipation all devices
conducting
Storage & operating temperature
T_j = 25 ˚C to 150˚C
T_j ≤ 80 ˚C¹
R_GS = 20 kΩ
T_a = 25 ˚C
T_a = 100 ˚C
T_a = 25 ˚C
T_a = 25 ˚C
T_a = 100 ˚C
T_a = 25 ˚C
T_a = 100 ˚C
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
MAX.
25
25
25
± 20
5.5
3.5
22
1.67
0.67
2.78
1.11
150
UNIT
V
V
V
V
A
A
A
W
W
W
W
˚C
1 The maximum permissible junction temperature prior to application of continuous drain-source voltage is limited
by thermal runaway.
October 1998
1
Rev 1.000