PHN603S Datasheet, PDF (3/7 Pages) NXP Semiconductors – TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver

Philips Semiconductors
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
Product specification
PHN603S
Normalised Power Dissipation, PD (%)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_a)
Transient Thermal Impedance, Zth j-a (K/W)
100
MOSFET
D = 0.5
10 0.2
0.1
0.05
1
0.02
P_{D tp D = tp/T}
0.1
Single pulse
0.01
1E-06
1E-05
T
t
1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
pulse width, tp (s)
Fig.4. Transient thermal impedance; MOSFET.
Z_{th j-a} = f(t); parameter D = t_p/T
Normalised Drain Current, ID (%)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_a); conditions: V_GS ≥ 4.5 V
Peak Pulsed Drain Current, IDM (A)
100
RDS(on) = VDS/ ID
10
1
d.c.
0.1
PHN603S
tp = 100 us
1 ms
10 ms
100 ms
0.01
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Fig.3. Safe operating area. T_a = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Transient Thermal Impedance, Zth j-a (K/W) SCHOTTKY
100
10
Single pulse
1
P_{D tp}
0.1
0.01
1E-06
1E-05
1E-04 1E-03 1E-02 1E-01
pulse width, tp (s)
t
1E+00 1E+01
Fig.5. Transient thermal impedance; Schottky Diode.
Z_{th j-a} = f(t)
junctions
Rth j-b
MOSFET
6 PAIRS
SCHOTTKY
board
MOSFET
SCHOTTKY
Rth b-a
ambient
Fig.6. Thermal model; typical values.
R_{th j-b} and R_{th b-a}
October 1998
3
Rev 1.000