PHN603S Datasheet, PDF (4/7 Pages) NXP Semiconductors – TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver

Philips Semiconductors
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
Product specification
PHN603S
Drain Current, ID (A)
5
4.5 V
VGS = 3.4 V
4
10V
3
PHN603S
Tj = 25 C
3.2 V
2
3V
2.8 V
1
2.4 V
2.6 V
0
0
1
2
3
4
5
Drain-Source Voltage, VDS (V)
Fig.7. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
Drain-Source On Resistance, RDS(on) (Ohms) PHN603S
0.5
0.45
2.8V
3V
3.2V
VGS = 3.4 V
0.4
0.35
Tj = 25 C
0.3
0.25
0.2
0.15
0.1
10V
4.5V
0.05
0
0
1
2
3
4
5
Drain Current, ID (A)
Fig.8. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
Drain current, ID (A)
5
4.5 ^{VDS > ID X RDS(ON)}
4
3.5
3
2.5
2
150 C
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
Gate-source voltage, VGS (V)
PHN603S
Tj = 25 C
3
3.5
Fig.9. Typical transfer characteristics.
I_D = f(V_GS)
Transconductance, gfs (S)
10
9 ^{VDS > ID X RDS(ON)}
8
Tj = 25 C
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5
Drain current, ID (A)
PHN603S
150 C
4 4.5 5
Fig.10. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D)
a
2
SOT223 30V Trench Normalised RDS(ON) = f(Tj)
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.11. Normalised drain-source on-state resistance.
R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j)
VGS(TO) / V
5
PHN1013
4
3 _typ.
2
min.
1
-0100
-50
0
50
Tj / C
100
150
200
Fig.12. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
October 1998
4
Rev 1.000