PHN603S Datasheet, PDF (2/7 Pages) NXP Semiconductors – TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver

Philips Semiconductors
TrenchMOS/ Schottky diode array
Three phase brushless d.c. motor driver
Product specification
PHN603S
THERMAL RESISTANCES
SYMBOL
R_{th j-a}
PARAMETER
Thermal resistance junction to
ambient
CONDITIONS
FR4 board, minimum
footprint
Per device
All devices conducting
TYP.
75
42
MAX.
-
-
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS
V_GS(TO)
R_DS(ON)
I_GSS
I_DSS
Q_g(tot)
Q_gs
Q_gd
t_{d on}
t_r
t_{d off}
t_f
C_iss
C_oss
C_rss
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V_GS = 0 V; I_D = 1 mA
V_DS = V_GS; I_D = 1 mA
T_j = 150˚C
V_GS = 10 V; I_D = 5 A
V_GS = 4.5 V; I_D = 2.5 A
V_GS = 10 V; I_D = 5 A; T_j = 150˚C
V_GS = ±20 V; V_DS = 0 V
V_DS = 25 V; V_GS = 0 V;
T_j = 100˚C
I_D = 1 A; V_DD = 20 V; V_GS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V_DD = 20 V; I_D = 1 A;
V_GS = 10 V; R_G = 6 Ω
Resistive load
Input capacitance
Output capacitance
Feedback capacitance
V_GS = 0 V; V_DS = 20 V; f = 1 MHz
MIN. TYP. MAX. UNIT
25 -
-
V
1.0 1.8 -
V
0.4 -
-
V
- 30 35 mΩ
- 50 55 mΩ
- 50 60 mΩ
- 10 100 nA
- 0.2 1.0 mA
-
5 10 mA
- 17 - nC
- 1.7 - nC
- 5.2 - nC
-
8
- ns
- 11 - ns
- 31 - ns
- 17 - ns
- 650 - pF
- 320 - pF
- 130 - pF
SCHOTTKY DIODE LIMITING VALUES AND CHARACTERISTICS
T_j = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_F
Continuous forward diode
T_a = 25 ˚C
current
I_FRM
Repetitive peak forward diode
current
V_F
Diode forward voltage
t_rr
Reverse recovery time
I_F = 2.5 A; V_GS = 0 V
I_F = 2.5 A; V_GS = 0 V, T_j = 100 ˚C
I_F = 0.5 A to I_R = 0.5 A
MIN.
-
-
-
-
-
TYP.
-
-
0.4
0.3
20
MAX. UNIT
5.5 A
22
A
0.6 V
0.55 V
-
ns
October 1998
2
Rev 1.000