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| 74HC3GU04_15 Datasheet, PDF (5/17 Pages) NXP Semiconductors – Triple unbuffered inverter | |||
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NXP Semiconductors
74HC3GU04
Triple unbuffered inverter
Table 8. Dynamic characteristics â¦continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter
Conditions
ï40 ï°C to +85 ï°C
Min Typ[1] Max
tt
transition time nY; see Figure 5
[3]
VCC = 2.0 V
-
18
95
VCC = 4.5 V
-
6
19
VCC = 6.0 V
CPD
power dissipation VI = GND to VCC
capacitance
-
[4]
-
5
16
5
-
ï40 ï°C to +125 ï°C Unit
Min
Max
-
125 ns
-
25 ns
-
20 ns
-
-
pF
[1] All typical values are measured at Tamb = 25 ï°C.
[2] tpd is the same as tPLH and tPHL.
[3] tt is the same as tTLH and tTHL.
[4] CPD is used to determine the dynamic power dissipation (PD in ïW).
PD = CPD ï´ VCC2 ï´ fi ï´ N + ï(CL ï´ VCC2 ï´ fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
ï(CL ï´ VCC2 ï´ fo) = sum of outputs.
12. Waveforms
VI
nA input
GND
VOH
nY output
VOL
VM
t PHL
VM
t THL
VM
VM
10 %
t PLH
90 %
t TLH
mna722
Measurement points are given in Table 9.
Fig 5. Propagation delay data input (nA) to data output (nY) and transition time output (nY)
Table 9. Measurement points
Type
74HC3GU04
Input
VM
0.5 ï´ VCC
Output
VM
0.5 ï´ VCC
74HC3GU04
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 â 2 October 2013
© NXP B.V. 2013. All rights reserved.
5 of 17
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