74HC3GU04_15 Datasheet, PDF (4/17 Pages) NXP Semiconductors – Triple unbuffered inverter

NXP Semiconductors
74HC3GU04
Triple unbuffered inverter
10. Static characteristics
Table 7. Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
V_IH
HIGH-level input
V_CC = 2.0 V
voltage
V_CC = 4.5 V
V_CC = 6.0 V
V_IL
LOW-level input
V_CC = 2.0 V
voltage
V_CC = 4.5 V
V_CC = 6.0 V
V_OH
HIGH-level output
V_I = V_IH or V_IL
voltage
I_O = 20 A; V_CC = 2.0 V
I_O = 20 A; V_CC = 4.5 V
I_O = 20 A; V_CC = 6.0 V
I_O = 4.0 mA; V_CC = 4.5 V
I_O = 5.2 mA; V_CC = 6.0 V
V_OL
LOW-level output
V_I = V_IH or V_IL
voltage
I_O = 20 A; V_CC = 2.0 V
I_O = 20 A; V_CC = 4.5 V
I_O = 20 A; V_CC = 6.0 V
I_O = 4.0 mA; V_CC = 4.5 V
I_O = 5.2 mA; V_CC = 6.0 V
I_I
input leakage current V_I = V_CC or GND; V_CC = 6.0 V
I_CC
supply current
per input pin; V_I = V_CC or GND;
I_O = 0 A; V_CC = 6.0 V
C_I
input capacitance
40 C to +85 C
Min Typ^[1] Max
1.7 1.1
-
3.6 2.4
-
4.8 3.1
-
-
0.9 0.3
-
2.1 0.9
-
2.9 1.2
1.9 2.0
-
4.4 4.5
-
5.9 6.0
-
4.13 4.32 -
5.63 5.81 -
-
0 0.1
-
0 0.1
-
0 0.1
- 0.15 0.33
- 0.16 0.33
-
- 1.0
-
-
10
-
3.0
-
[1] All typical values are measured at T_amb = 25 C.
40 C to +125 C Unit
Min
Max
1.7
-
V
3.6
-
V
4.8
-
V
-
0.3 V
-
0.9 V
-
1.2 V
1.9
-
V
4.4
-
V
5.9
-
V
3.7
-
V
5.2
-
V
-
0.1 V
-
0.1 V
-
0.1 V
-
0.4 V
-
0.4 V
-
1.0 A
-
20
A
-
-
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter
Conditions
40 C to +85 C
Min Typ^[1] Max
t_pd
propagation delay nA to nY; see Figure 5
[2]
V_CC = 2.0 V
-
13
75
V_CC = 4.5 V
-
6
15
V_CC = 6.0 V
-
5
13
40 C to +125 C Unit
Min
Max
-
90 ns
-
18 ns
-
15 ns
74HC3GU04
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 2 October 2013
© NXP B.V. 2013. All rights reserved.
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