TDA8922B Datasheet, PDF (24/32 Pages) NXP Semiconductors – 2 X 50 W class-D power amplifier

Philips Semiconductors
TDA8922B
2 × 50 W class-D power amplifier
45
G
(dB)
40
001aab211
35
(1)
30
(2)
(3)
25
20
10
10²
10³
10⁴
10⁵
f (Hz)
V_i = 100 mV; R_s = 5.6 kΩ; C_i = 330 pF.
(1) V_P = ±21 V; 1 × 8 Ω BTL configuration.
(2) V_P = ±26 V; 2 × 6 Ω SE configuration.
(3) V_P = ±26 V; 2 × 8 Ω SE configuration.
Fig 22. Gain as a function of frequency; R_s = 5.6 kΩ
and C_i = 330 pF.
0
SVRR
(dB)
−20
001aab213
−40
(1)
−60
(2)
(3)
−80
−100
10
10²
10³
10⁴
10⁵
f (Hz)
V_P = ±26 V; V_ripple = 2 V (p-p).
(1) Both supply lines rippled.
(2) Both supply lines rippled in anti phase.
(3) One supply line rippled.
Fig 24. SVRR as a function of frequency.
45
G
(dB)
40
35
30
25
001aab212
(1)
(2)
(3)
20
10
10²
10³
10⁴
10⁵
f (Hz)
V_i = 100 mV; R_s = 0 Ω; C_i = 330 pF.
(1) V_P = ±21 V; 1 × 8 Ω BTL configuration.
(2) V_P = ±26 V; 2 × 6 Ω SE configuration.
(3) V_P = ±26 V; 2 × 8 Ω SE configuration.
Fig 23. Gain as a function of frequency; R_s = 0 Ω and
C_i = 330 pF.
10
V_o
(V)
1
001aab214
10^−1
10^−2
10^−3
10^−4
10^−5
10^−6
0
2
V_i = 100 mV; f = 1 kHz.
4
6
V_mode (V)
Fig 25. Output voltage as a function of mode voltage.
9397 750 13357
Preliminary data sheet
Rev. 01 — 1 October 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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