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TDA8922B Datasheet, PDF (11/32 Pages) NXP Semiconductors – 2 X 50 W class-D power amplifier
Philips Semiconductors
TDA8922B
2 × 50 W class-D power amplifier
9. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VP
IORM
supply voltage
repetitive peak current in
output pin
maximum output
current limiting
-
[1] 5
Tstg
storage temperature
−55
Tamb
ambient temperature
−40
Tj
junction temperature
-
[1] Current limiting concept. See also Section 13.6.
10. Thermal characteristics
Max Unit
±30
V
-
A
+150 °C
+85
°C
150
°C
Table 6:
Symbol
Rth(j-a)
Rth(j-c)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to ambient
TDA8922BTH
in free air
TDA8922BJ
in free air
thermal resistance from junction to case
TDA8922BTH
TDA8922BJ
[1] See also Section 13.5.
Typ
[1]
35
35
[1]
1.3
1.3
Unit
K/W
K/W
K/W
K/W
11. Static characteristics
Table 7: Static characteristics
VP = ±26 V; fosc = 317 kHz; Tamb = 25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ
Supply
VP
Iq(tot)
supply voltage
total quiescent supply
current
no load; no filter; no
snubber network
connected
[1] ±12.5 ±26
-
50
Istb
standby supply current
Mode select input; pin MODE
-
150
VI
input voltage
[2] 0
-
II
input current
VI = 5.5 V
-
100
Vstb
input voltage for
Standby mode
[2] 0
-
[3]
Vmute
input voltage for Mute
mode
[2] 2.2 -
[3]
Von
input voltage for
Operating mode
[2] 4.2 -
[3]
Max Unit
±30 V
65 mA
500 µA
6V
300 µA
0.8 V
3.0 V
6V
9397 750 13357
Preliminary data sheet
Rev. 01 — 1 October 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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