TDA8922B Datasheet, PDF (13/32 Pages) NXP Semiconductors – 2 X 50 W class-D power amplifier

Philips Semiconductors
TDA8922B
2 × 50 W class-D power amplifier
12. Dynamic characteristics
12.1 Switching characteristics
Table 8: Switching characteristics
V_DD = ±26 V; T_amb = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Internal oscillator
f_osc
typical internal oscillator R_OSC = 30.0 kΩ
frequency
f_osc(int)
internal oscillator
frequency range
External oscillator or frequency tracking
V_OSC
high-level voltage on pin
OSC
V_OSC(trip) trip level for tracking on
pin OSC
f_track
frequency range for
tracking
Min
Typ
Max
Unit
290
317
344
kHz
210
-
600
kHz
SGND + 4.5 SGND + 5 SGND + 6 V
-
SGND + 2.5 -
V
210
-
600
kHz
12.2 Stereo and dual SE application
Table 9: Stereo and dual SE application characteristics
V_P = ±26 V; R_L = 6 Ω; f_i = 1 kHz; R_sL < 0.1 Ω ^[1]; T_amb = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
P_o
output power
R_L = 4 Ω; V_P = ±21 V
[2]
THD = 0.5 %
-
32
Max
Unit
-
W
THD = 10 %
-
40
-
W
R_L = 6 Ω; V_P = ±26 V
[2]
THD = 0.5 %
-
40
-
W
THD = 10 %
-
50
-
W
R_L = 8 Ω; V_P = ±21 V
[2]
THD = 0.5 %
-
20
-
W
THD = 10 %
-
25
-
W
R_L = 8 Ω; V_P = ±26 V
[2]
THD = 0.5 %
-
32
-
W
THD
G_v(cl)
SVRR
total harmonic distortion
closed loop voltage gain
supply voltage ripple
rejection
THD = 10 %
P_o = 1 W
f_i = 1 kHz
f_i = 6 kHz
operating
f_i = 100 Hz
f_i = 1 kHz
mute; f_i = 100 Hz
standby; f_i = 100 Hz
-
[3]
-
-
29
[4]
-
40
[4] _-
[4] _-
40
-
W
0.02
0.05
%
0.07
-
%
30
31
dB
55
-
dB
50
-
dB
55
-
dB
80
-
dB
9397 750 13357
Preliminary data sheet
Rev. 01 — 1 October 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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