TDA8357J Datasheet, PDF (2/16 Pages) NXP Semiconductors – Full bridge vertical deflection output circuit in LVDMOS

Philips Semiconductors
Full bridge vertical deflection output circuit
in LVDMOS
Preliminary specification
TDA8357J
FEATURES
• Few external components required
• High efficiency fully DC coupled vertical bridge output
circuit
• Vertical flyback switch with short rise and fall times
• Built-in guard circuit
• Thermal protection circuit
• Improved EMC performance due to differential inputs.
GENERAL DESCRIPTION
The TDA8357J is a power circuit for use in 90° and 110°
colour deflection systems for 25 to 200 Hz field
frequencies, and for 4 : 3 and 16 : 9 picture tubes. The IC
contains a vertical deflection output circuit, operating as a
high efficiency class G system. The full bridge output
circuit allows DC coupling of the deflection coil in
combination with single positive supply voltages.
The IC is constructed in a Low Voltage DMOS (LVDMOS)
process that combines bipolar, CMOS and DMOS
devices. DMOS transistors are used in the output stage
because of absence of second breakdown.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Supplies
V_P
V_FB
I_q(P)(av)
I_q(FB)(av)
P_tot
supply voltage
flyback supply voltage
average quiescent supply current
average quiescent flyback supply current
total power dissipation
Inputs and outputs
V_i(dif)(p-p)
I_o(p-p)
differential input voltage (peak-to-peak value)
output current (peak-to-peak value)
Flyback switch
I_o(peak)
maximum (peak) output current
Thermal data; in accordance with IEC 747-1
T_stg
T_amb
T_j
storage temperature
ambient temperature
junction temperature
CONDITIONS MIN. TYP. MAX. UNIT
during scan
during scan
t ≤ 1.5 ms
7.5 12
18
V
2V_P 45
66
V
−
10
15
mA
−
−
10
mA
−
−
8
W
−
1000 1500 mV
−
−
2.0 A
−
−
±1.2 A
−55 −
−25 −
−
−
+150 °C
+75 °C
150 °C
ORDERING INFORMATION
TYPE
NUMBER
TDA8357J
NAME
DBS9P
PACKAGE
DESCRIPTION
plastic DIL-bent-SIL power package; 9 leads (lead length
12/11 mm); exposed die pad
VERSION
SOT523-1
1999 Nov 10
2