PE3335 Datasheet, PDF (5/15 Pages) Peregrine Semiconductor Corp. – 3000 MHz UltraCMOS™ Integer-N PLL for Low Phase Noise Applications

PE3335
Product Specification
Table 2. Absolute Maximum Ratings
Symbol Parameter/Conditions Min Max
VDD
Supply voltage
VI
Voltage on any input
II
DC into any input
-0.3 4.0
-0.3 VDD +
0.3
-10 +10
IO
DC into any output
-10 +10
Tstg
Storage temperature range -65 150
Units
V
V
mA
mA
°C
Table 3. Operating Ratings
Symbol Parameter/Conditions Min Max Units
VDD
Supply voltage
2.85 3.15
V
TA
Operating ambient
temperature range
-40 85
°C
Table 4. ESD Ratings
Symbol Parameter/Conditions
VESD
ESD voltage (Human Body
Level
1000
Units
V
Note 1: Periodically sampled, not 100% tested. Tested per MIL-
STD-883, M3015 C2
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS™ device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating in Table 4.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Table 5. DC Characteristics: V_DD = 3.0 V, -40° C < T_A < 85° C, unless otherwise specified
Symbol
Parameter
IDD
Operational supply current;
Prescaler disabled
Prescaler enabled
Digital Inputs: All except fr, R0, Fin, F_in
VIH
High level input voltage
VIL
Low level input voltage
IIH
High level input current
IIL
Low level input current
Reference Divider input: fr
IIHR
High level input current
IILR
Low level input current
R0 Input (Pull-up Resistor): R0
IIHRO
High level input current
IILRO
Low level input current
Counter output Dout
VOLD
Output voltage LOW
VOHD
Output voltage HIGH
Lock detect outputs: Cext, LD
VOLC
Output voltage LOW, Cext
VOHC
Output voltage HIGH, Cext
VOLLD
Output voltage LOW, LD
Charge Pump output: CP
ICP - Source Drive current
ICP – Sink Drive current
ICPL
Leakage current
ICP – Source Sink vs. source mismatch
vs. ICP Sink
ICP vs. VCP Output current magnitude variation vs. voltage
Conditions
VDD = 2.85 to 3.15 V
VDD = 2.85 to 3.15 V
VDD = 2.85 to 3.15 V
VIH = VDD = 3.15 V
VIL = 0, VDD = 3.15 V
VIH = VDD = 3.15 V
VIL = 0, VDD = 3.15 V
VIH = VDD = 3.15 V
VIL = 0, VDD = 3.15 V
Iout = 6 mA
Iout = -3 mA
Iout = 100 mA
Iout = -100 mA
Iout = 6 mA
VCP = VDD / 2
VCP = VDD / 2
1.0 V < VCP < VDD – 1.0 V
VCP = VDD / 2,
TA = 25° C
V < VCP < VDD – 1.0 V
TA = 25° C
Min
0.7 x VDD
Typ
10
24
-1
-100
-5
VDD - 0.4
VDD - 0.4
-2.6
-2
1.4
2
-1
1
Max
31
Units
mA
mA
V
0.3 x VDD
V
+70
µA
µA
+100
µA
µA
+5
µA
µA
0.4
V
V
0.4
V
V
0.4
V
-1.4
mA
2.6
mA
µA
15
%
15
%
Document No. 70-0049-02 │ www.psemi.com
©2005 Peregrine Semiconductor Corp. All rights reserved.
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