SBC846BDW1T1G Datasheet, PDF (9/11 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 _0.01
SINGLE PULSE
0.001
0
1.0
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
Zq_JA(t) = r(t) Rq_JA
Rq_JA = 3285C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) − T_C = P_(pk) Rq_JC(t)
10
100
1.0 k
10 k
100 k
1.0 M
t, TIME (ms)
Figure 34. Thermal Response
-200
1s
3 ms
-100
-50
T_A = 25°C TJ = 25°C
BC558
-10
BC557
BC556
-5.0
-2.0
-1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0 -10
-30 -45 -65 -100
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 35. Active Region Safe Operating Area
The safe operating area curves indicate I_C−V_CE limits
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
The data of Figure 35 is based upon T_J(pk) = 150°C; T_C
or T_A is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided T_J(pk) ≤
150°C. T_J(pk) may be calculated from the data in
Figure 34. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by the
secondary breakdown.
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