SBC846BDW1T1G Datasheet, PDF (6/11 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS − BC847BDW1T1G, SBC847BDW1T1G, NSVBC847BDW1T2G
1.20
V_CE = 5 V
1.10
1.00
0.90
−55°C
0.80
0.70
25°C
0.60
0.50
150°C
0.40
0.30
0.20
0.0001
0.001
0.01
I_C, COLLECTOR CURRENT (A)
Figure 18. V_BE(on) at V_CE = 5 V
10
T_A = 25°C
C_ib
C_ob
1
0.1
1
10
V_R, REVERSE VOLTAGE (V)
Figure 20. Capacitances
1000
V_CE = 10 V
T_A = 25°C
100
10
0.1
0.1
1
10
100
I_C, COLLECTOR CURRENT (A)
Figure 19. Current − Gain − Bandwidth
Product
2
1.6 _{IC =}
10 mA
1.2
I_C =
20 mA
T_A = 25°C
I_C =
50 mA
I_C =
100 mA
0.8
0.4
0
100
0.01
0.1
1
10
100
I_B, BASE CURRENT (mA)
Figure 21. Collector Saturation Region
−0.2 ^VCE ^{= 5 V}
−0.6
−1
−1.4
q_VB, for V_BE
−1.8
−55°C to 150°C
−2.2
−2.6
−3
0.1
1
10
100
I_B, BASE CURRENT (mA)
Figure 22. Base−Emitter Temperature Coefficient
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