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SBC846BDW1T1G Datasheet, PDF (2/11 Pages) ON Semiconductor – Dual General Purpose Transistors
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BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)CEO
V
65
−
−
45
−
−
30
−
−
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)CES
V
80
−
−
50
−
−
30
−
−
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)CBO
V
80
−
−
50
−
−
30
−
−
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)EBO
V
6.0
−
−
6.0
−
−
5.0
−
−
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
−
−
−
15
nA
−
5.0
mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC847B, NSVBC847
BC847C, SBC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC847B, NSVBC847
BC847C, SBC847C, BC848C
hFE
−
−
150
−
−
270
−
200
290
450
420
520
800
Collector −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
Base −Emitter Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
VCE(sat)
−
−
V
−
0.25
−
0.6
VBE(sat)
V
−
0.7
−
−
0.9
−
VBE(on)
mV
580
660
700
−
−
770
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
−
MHz
−
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
−
Noise Figure
NF
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
−
pF
−
4.5
dB
−
10
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