SBC846BDW1T1G Datasheet, PDF (8/11 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS − BC848CDW1T1G, SBC848CDW1T1G
1.0
V_CE = 5 V
0.9
0.8
0.7
−55°C
25°C
0.6
0.5
0.4
150°C
0.3
0.2
0.1
0.0
0.0001
0.001
0.01
I_C, COLLECTOR CURRENT (A)
Figure 29. V_BE(on) at V_CE = 5 V
1000
V_CE = 10 V
T_A = 25°C
100
10
0.1
0.1
1
10
100
I_C, COLLECTOR CURRENT (A)
Figure 30. Current − Gain − Bandwidth
Product
10
1
0.1
2
T_A = 25°C
I_C =
I_C =
T_A = 25°C
1.6 ^{10 mA}
20 mA
C_ib
1.2
I_C =
50 mA
C_ob
0.8
I_C =
100 mA
0.4
1
10
V_R, REVERSE VOLTAGE (V)
Figure 31. Capacitances
0
100
0.01
0.1
1
10
100
I_B, BASE CURRENT (mA)
Figure 32. Collector Saturation Region
−0.2 ^VCE ^{= 5 V}
−0.6
−1
−1.4
−1.8
q_VB, for V_BE
−2.2
−55°C to 150°C
−2.6
−3
0.1
1
10
100
I_B, BASE CURRENT (mA)
Figure 33. Base−Emitter Temperature Coefficient
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