SBC846BDW1T1G Datasheet, PDF (5/11 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS − BC847BDW1T1G, SBC847BDW1T1G, NSVBC847BDW1T2G
600
500
150°C
V_CE = 5 V
400
25°C
300
200
−55°C
100
0
0.0001
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 12. DC Current Gain at V_CE = 5 V
600
500
150°C
V_CE = 10 V
400
25°C
300
200
−55°C
100
0
0.0001
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 13. DC Current Gain at V_CE = 10 V
0.25
I_C/I_B = 10
0.20
0.15
0.10
0.05
0.00
0.0001
25°C
150°C
−55°C
0.001
0.01
I_C, COLLECTOR CURRENT (A)
Figure 14. V_CE at I_C/I_B = 10
0.30
0.25
I_C/I_B = 20
0.20
0.15
25°C
150°C
0.10
0.05
−55°C
0.00
0.1
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 15. V_CE at I_C/I_B = 20
1.20
1.00
I_C/I_B = 10
0.80
0.60
0.40
−55°C
25°C
150°C
0.20
0.00
0.0001
0.001
0.01
I_C, COLLECTOR CURRENT (A)
Figure 16. V_BE(sat) at I_C/I_B = 10
1.20
1.00
I_C/I_B = 20
0.80
−55°C
25°C
0.60
0.40
150°C
0.20
0.00
0.1
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 17. V_BE(sat) at I_C/I_B = 20
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