SBC846BDW1T1G Datasheet, PDF (3/11 Pages) ON Semiconductor – Dual General Purpose Transistors

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS − BC846BDW1T1G, SBC846BDW1T1G
600
500
150°C
400
V_CE = 5 V
300
25°C
200
−55°C
100
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain at V_CE = 5 V
600
500
150°C
400
300
25°C
V_CE = 10 V
200
−55°C
100
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain at V_CE = 10 V
0.25
I_C/I_B = 10
0.20
0.15
0.10
0.05
25°C
150°C
−55°C
0.3
0.25
I_C/I_B = 20
0.2
0.15
0.1
0.05
25°C
150°C
−55°C
0.00
0
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 3. V_CE(sat) at I_C/I_B = 10
I_C, COLLECTOR CURRENT (A)
Figure 4. V_CE(sat) at I_C/I_B = 20
1.10
1.00
I_C/I_B = 10
0.90
−55°C
0.80
25°C
0.70
0.60
150°C
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
I_C, COLLECTOR CURRENT (A)
Figure 5. V_BE(sat) at I_C/I_B = 10
1.10
1.00
I_C/I_B = 20
0.90
−55°C
0.80
0.70
25°C
0.60
0.50
150°C
0.40
0.30
0.20
0.1
0.0001
0.001
0.01
0.1
I_C, COLLECTOR CURRENT (A)
Figure 6. V_BE(sat) at I_C/I_B = 20
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