AMIS-30621 Datasheet, PDF (9/59 Pages) AMI SEMICONDUCTOR – LIN Microstepping Motordriver

AMIS−30621
TxD
t_BIT
t_BIT
50%
t
LIN
t_{BUS_dom(max)}
t_{BUS_rec(min)}
TH_Rec(max)
TH_Dom(max)
TH_Rec(min)
TH_Dom(min)
Thresholds
receiver 1
Thresholds
receiver 2
t
RxD
t_{BUS_dom(min)}
t_{BUS_rec(max)}
(receiver 2)
50%
t_{rx_pdf}
t_{rx_pdr}
t
Figure 5. Timing Diagram for AC Characteristics According to LIN 2.0 & 2.1
TYPICAL APPLICATION
V_BAT
Connect
to V_BAT
or GND
LIN bus
C₈
100 nF
C₇
100 mF
220 nF ^{C6 220 nF}
C₃
100 nF
C₄
100 nF
1 mF
CPN ^C5 CPP VCP VBB
VDD ⁹
10 11
12
3
C₉
HW0
1
VBB
19
1k
20
SWI _C2
18 ^MOTXP
HW1
2
AMIS−30621
16 ^MOTXN
1 kW
HW2
8
C₁
2.7 nF
15 ^MOTYP
LIN
6
13 ^MOTYN
VDR 27 V
5
4
7
14 17
C₁₀
TST
GND
Figure 6. Typical Application Diagram for SO device.
2.7 nF
M
15. All resistors are ±5%, 1/4 W
16. C₁, C₂ minimum value is 2.7 nF, maximum value is 10 nF
17. Depending on the application, the ESR value and working voltage of C₇ must be carefully chosen
18. C₃ and C₄ must be close to pins V_BB and GND
19. C₅ and C₆ must be as close as possible to pins CPN, CPP, VCP, and V_BB to reduce EMC radiation
20. C₉ must be a ceramic capacitor to assure low ESR
21. C₁₀ is placed for EMC reasons; value depends on EMC requirements of the application
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9
Connect
to V_BAT
or GND