NSBC123JPDXV6T1G Datasheet, PDF (8/15 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 NPN TRANSISTOR
1
I_C/I_B = 10
0.1
T_A = -25°C
0.01
1000
25°C
75°C
100
V_CE = 10 V
T_A = 75°C
25°C
-25°C
0.001
0
20
40
I_C, COLLECTOR CURRENT (mA)
10
50
1
Figure 12. V_CE(sat) versus I_C
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
4
100
75°C
25°C
f = 1 MHz
I_E = 0 V
10
T_A = -25°C
3
T_A = 25°C
1
2
0.1
1
0.01
0
0.001
0
10
20
30
40
50
0
2
4
6
V_O = 5 V
8
10
V_R, REVERSE BIAS VOLTAGE (VOLTS)
V_in, INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V_O = 0.2 V
10
1
T_A = -25°C
75°C ^25°C
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output
Current
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