NSBC123JPDXV6T1G Datasheet, PDF (11/15 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1, NSVB144EPDXV6T1
PNP TRANSISTOR
1
I_C/I_B = 10
 0.1
1000
T_A = -25°C
25°C
75°C
100
T_A = 75°C
25°C
-25°C
 0.01
0
1
0.8
0.6
0.4
0.2
00
10
20
30
40
10
1
10
100
I_C, COLLECTOR CURRENT (mA)
I_C, COLLECTOR CURRENT (mA)
Figure 27. V_CE(sat) versus I_C
Figure 28. DC Current Gain
100
f = 1 MHz
l_E = 0 V
T_A = 25°C
10
1
T_A = 75°C
25°C
-25°C
 0.1
10
20
30
40
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 29. Output Capacitance
 0.01
V_O = 5 V
 0.001
50
0 1 2 3  4  5  6  7  8  9 10
V_in, INPUT VOLTAGE (VOLTS)
Figure 30. Output Current versus Input Voltage
100
V_O = 0.2 V
T_A = -25°C
25°C
10
75°C
1
 0.1
0
10
 20
 30
 40
 50
I_C, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
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