NSBC123JPDXV6T1G Datasheet, PDF (12/15 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1, NSVBC114YPDXV6T1
NPN TRANSISTOR
1
I_C/I_B = 10
0.1
0.01
T_A = -25°C
25°C
75°C
0.001 ₀
20
40
60
80
I_C, COLLECTOR CURRENT (mA)
Figure 32. V_CE(sat) versus I_C
300
V_CE = 10
250
200
150
T_A = 75°C
25°C
-25°C
100
50
01 _{2 4 6 8 10 15 20 40 50 60 70 80 90 100}
I_C, COLLECTOR CURRENT (mA)
Figure 33. DC Current Gain
4
3.5
f = 1 MHz
l_E = 0 V
3
T_A = 25°C
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 34. Output Capacitance
100
T_A = 75°C
10
25°C
-25°C
V_O = 5 V
1
0
2
4
6
8
10
V_in, INPUT VOLTAGE (VOLTS)
Figure 35. Output Current versus Input Voltage
10
V_O = 0.2 V
1
T_A = -25°C
25°C
75°C
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 36. Input Voltage versus Output Current
http://onsemi.com
12