NSBC123JPDXV6T1G Datasheet, PDF (6/15 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR
1
I_C/I_B = 10
0.1
0.01
1000
T_A = -25°C
25°C
75°C
100
V_CE = 10 V
T_A = 75°C
25°C
-25°C
0.001
0
20
40
I_C, COLLECTOR CURRENT (mA)
Figure 2. V_CE(sat) versus I_C
10
50
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
4
100
25°C
f = 1 MHz
75°C
3
I_E = 0 V
T_A = 25°C
10
T_A = -25°C
1
2
0.1
1
0.01
V_O = 5 V
00
10
20
30
40
50
0.001
0 1 2 3 4 5 6 7 8 9 10
V_R, REVERSE BIAS VOLTAGE (VOLTS)
V_in, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V_O = 0.2 V
1
T_A = -25°C
25°C
75°C
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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