NSBC123JPDXV6T1G Datasheet, PDF (2/15 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation
T_A = 25°C (Note 1)
Derate above 25°C (Note 1)
Thermal Resistance (Note 1)
Junction-to-Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation
T_A = 25°C (Note 1)
Derate above 25°C (Note 1)
Thermal Resistance (Note 1)
Junction-to-Ambient
Junction and Storage Temperature
1. FR−4 @ Minimum Pad
DEVICE MARKING AND RESISTOR VALUES
Device
Package
NSBC114EPDXV6T1G
SOT−563
NSBC124EPDXV6T1G
SOT−563
NSBC144EPDXV6T1G
SOT−563
NSVB144EPDXV6T1G
SOT−563
NSBC114YPDXV6T1G
SOT−563
NSVBC114YDXV6T1G
SOT−563
NSBC114TPDXV6T1G (Note 2)
SOT−563
NSBC143TPDXV6T1G (Note 2)
SOT−563
NSVB143TPDXV6T1G (Note 2)
SOT−563
NSBC113EPDXV6T1G (Note 2)
SOT−563
NSBC123EPDXV6T1G (Note 2)
SOT−563
NSBC143EPDXV6T1G (Note 2)
SOT−563
NSBC143ZPDXV6T1G (Note 2)
SOT−563
NSVB143ZPDXV6T1G (Note 2)
SOT−563
NSBC124XPDXV6T1G (Note 2)
SOT−563
NSVB124XPDXV6T1G (Note 2)
SOT−563
NSBC123JPDXV6T1G (Note 2)
SOT−563
NSVB123JPDXV6T1G (Note 2)
SOT−563
Symbol
P_D
R_qJA
Symbol
P_D
R_qJA
T_J, T_stg
Max
357
2.9
350
Max
500
4.0
250
−55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
Marking
11
12
13
13
14
14
15
16
16
30
31
32
33
33
34
34
35
35
R1 (kW)
10
22
47
47
10
10
10
4.7
4.7
1.0
2.2
4.7
4.7
4.7
22
22
2.2
2.2
R2 (kW)
10
22
47
47
47
47
∞
∞
∞
1.0
2.2
4.7
47
47
47
47
47
47
http://onsemi.com
2