NSBC123JPDXV6T1G Datasheet, PDF (7/15 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 PNP TRANSISTOR
1
I_C/I_B = 10
1000
V_CE = 10 V
T_A = -25°C
 0.1
100
25°C
75°C
T_A = 75°C
25°C
-25°C
 0.01
0
 20
 40
I_C, COLLECTOR CURRENT (mA)
Figure 7. V_CE(sat) versus I_C
10
50
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
4
100
75°C
25°C
f = 1 MHz
3
l_E = 0 V
T_A = 25°C
10
T_A = -25°C
1
2
 0.1
1
 0.01
V_O = 5 V
0
0
10
20
30
40
50
 0.001
0 1  2 3  4  5  6  7  8  9 10
V_R, REVERSE BIAS VOLTAGE (VOLTS)
V_in, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input
Voltage
100
V_O = 0.2 V
10
1
T_A = -25°C
25°C
75°C
 0.1
0
10
 20
 30
 40
 50
I_C, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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