N25S830HA_14 Datasheet, PDF (3/12 Pages) ON Semiconductor – 256 kb Low Power Serial SRAMs

N25S830HA
Table 3. ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Rating
Unit
Voltage on any pin relative to V_SS
V_IN,OUT
–0.3 to V_CC + 0.3
V
Voltage on V_CC Supply Relative to V_SS
V_CC
–0.3 to 4.5
V
Power Dissipation
P_D
500
mW
Storage Temperature
T_STG
–40 to 125
°C
Operating Temperature
T_A
−40 to +85
°C
Soldering Temperature and Time
T_SOLDER
260°C, 10 sec
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 4. OPERATING CHARACTERISTICS (Over Specified Temperature Range)
Item
Symbol
Test Conditions
Typ
Min
(Note 1)
Max
Unit
Supply Voltage
V_CC
2.7
3.6
V
Input High Voltage
V_IH
0.7 x V_CC
V_CC + 0.3
V
Input Low Voltage
V_IL
−0.3
0.8
V
Output High Voltage
V_OH
I_OH = −0.4 mA
V_CC – 0.5
V
Output Low Voltage
V_OL
I_OL = 1 mA
0.2
V
Input Leakage Current
I_LI
CS = V_CC, V_IN = 0 to V_CC
0.5
mA
Output Leakage Current
I_LO
CS = V_CC, V_OUT = 0 to V_CC
0.5
mA
Read/Write Operating Current
I_CC1
F = 1 MHz, I_OUT = 0
3
mA
I_CC2
F = 10 MHz, I_OUT = 0
6
mA
I_CC3
F = fCLK MAX, I_OUT = 0
10
mA
Standby Current
I_SB
CS = V_CC, V_IN = V_SS or V_CC
1
4
mA
Data Retention Voltage
V_DR
1.0
V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
1. Typical values are measured at Vcc = Vcc Typ., T_A = 25°C and are not 100% tested.
Table 5. CAPACITANCE (Note 2)
Item
Symbol
Test Condition
Input Capacitance
C_IN
V_IN = 0 V, f = 1 MHz, T_A = 25°C
I/O Capacitance
C_I/O
V_IN = 0 V, f = 1 MHz, T_A = 25°C
2. These parameters are verified in device characterization and are not 100% tested
Min
Max
Unit
7
pF
7
pF
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