PSMN5R5-60YS Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 5.2 mΩ standard level FET

NXP Semiconductors
PSMN5R5-60YS
N-channel LFPAK 60 V, 5.2 mΩ standard level FET
20
R_DSon
(mΩ)
16
V_GS (V) = 4
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12
5
8
6
4
7 10
0
0
20
40
60
80
100
I_D (A)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
V_GS
(V)
8
6
4
2
30 V
12 V
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V_DS = 48 V
10⁴
C
(pF)
10³
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C_iss
C_oss
C_rss
0
0
20
40
60
Q_G (nC)
10²
10^−1
10
V_DS (V) ¹⁰³
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN5R5-60YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 24 December 2009
© NXP B.V. 2009. All rights reserved.
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