PSMN5R5-60YS Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 5.2 mΩ standard level FET

NXP Semiconductors
PSMN5R5-60YS
N-channel LFPAK 60 V, 5.2 mΩ standard level FET
100
I_D
(A)
80
60
40
20
0
0
003aad812
T_j = 175 °C
T_j = 25 °C
2
4 _{VGS (V)} 6
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Sub-threshold drain current as a function of
function of gate-source voltage; typical values
gate-source voltage
5
V_GS(th)
(V)
4
3
2
1
003aad280
2.4
a
2
max
1.6
typ
1.2
min
0.8
0.4
003aad696
0
−60
0
60
120
180
T_j (°C)
0
-6 0
0
60
120
180
Tj (°C)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Normalized drain-source on-state resistance
junction temperature
factor as a function of junction temperature.
PSMN5R5-60YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 24 December 2009
© NXP B.V. 2009. All rights reserved.
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