PSMN5R5-60YS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 5.2 mΩ standard level FET

NXP Semiconductors
PSMN5R5-60YS
N-channel LFPAK 60 V, 5.2 mΩ standard level FET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Min Typ Max Unit
Source-drain diode
V_SD
source-drain voltage I_S = 15 A; V_GS = 0 V; T_j = 25 °C; see Figure 17 -
0.8 1.2 V
t_rr
reverse recovery time I_S = 25 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 30 V
-
43
-
ns
-
58
-
nC
120
g_fs
(S)
80
40
003aad810
20
R_DSon
(mΩ)
15
10
5
003aad813
0
0
30
60
90
I_D (A)
0
0
5
10
15
20
V_GS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
6000
C
(pF)
003aad817
C_iss
4000
C_rss
2000
0
0
3
6
9
12
V_GS (V)
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
100
I_D
(A)
80
V_GS (V) = 10
7
5.5
6
003aad811
5
60
40
4.5
20
0
0
4
0.2
0.4
0.6
0.8
1
V_DS (V)
Fig 7. Input and reverse transfer capacitances as a
Fig 8. Output characteristics: drain current as a
function of gate-source voltage, typical values
function of drain-source voltage; typical values
PSMN5R5-60YS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 24 December 2009
© NXP B.V. 2009. All rights reserved.
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