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PSMN5R5-60YS Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel LFPAK 60 V, 5.2 mΩ standard level FET | |||
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PSMN5R5-60YS
N-channel LFPAK 60 V, 5.2 m⦠standard level FET
Rev. 02 â 24 December 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 Advanced TrenchMOS provides low
RDSon and low gate charge
 High efficiency in switching power
converters
 Improved mechanical and thermal
characteristics
 LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
 DC-to-DC converters
 Lithium-ion battery protection
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
Tmb = 25 °C; see Figure 1 [1]
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
Tj
junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup ⤠60 V;
RGS = 50 â¦; unclamped
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 75 A;
VDS = 30 V; see Figure 14
and 15
Min Typ Max Unit
-
-
60 V
-
-
100 A
-
-
130 W
-55 -
175 °C
-
-
170 mJ
-
11.2 -
nC
-
56 -
nC
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